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參數(shù)資料
| 型號： | PHP4ND40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors FREDFET, Avalanche energy rated |
| 中文描述： | 4.4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SOT-78, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 65K |
| 代理商： | PHP4ND40E |
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHP4ND40E, PHB4ND40E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
Fast reverse recovery diode
V
DSS
= 400 V
I
D
= 4.4 A
R
DS(ON)
≤
1.8
t
rr
= 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a
F
ast
R
ecovery
E
pitaxial
D
iode (FRED).
This gives improved switching performance in half bridge ansd full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP4ND40E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4ND40E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
±
30
4.4
2.7
18
83
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
August 1998
1
Rev 1.100
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