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參數(shù)資料
| 型號(hào)： | PHD3N20E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 3.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | PHD3N20E |
Philips Semiconductors
Product specification
PowerMOS transistor
PHD3N20E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
1us
10us
1ms
0.1s
10s
tp, pulse widtht (s)
Zth j-mb, Transient Thermal Impedance (K/W)
10
1
0.1
0.01
1s
10ms
100us
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
PHP2N20
5 V
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
VGS = 4.5 V
5.5 V
7 V
10 V
Tj = 25 C
1
10
100
1000
0.1
1
10
100
PHP2N20E
100 us
1 ms
10 ms
100 ms
tp = 10 us
DC
RDSON =VDSID
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
0
1
2
ID, Drain current (Amps)
3
4
5
6
7
8
0
1
2
3
4
PHP2N20E
RDS(on), Drain-Source on resistance (Ohms)
10 V
7 V
VGS = 4.5 V
5 V
5.5 V
Tj = 25 C
September 1997
3
Rev 1.000
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