參數(shù)資料
型號： PH2625L
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS logic level FET
中文描述： 100 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝： PLASTIC, LFPAK-4
文件頁數(shù)： 2/13頁
文件大?。?/td> 100K
代理商： PH2625L
9397 750 14324
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 02 — 24 February 2005
2 of 13
Philips Semiconductors
PH2625L
N-channel TrenchMOS logic level FET
3.
Ordering information
4.
Limiting values
[1]
Duty cycle is limited by the maximum junction temperature.
[2]
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
LFPAK
Description
plastic single-ended surface mounted package; 4 leads
Version
SOT669
PH2625L
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
25
25
±
20
100
63
300
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
= 25
°
C
I
SM
peak source (diode forward)
current
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
-
-
52
156
A
A
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
unclamped inductive load; I
D
= 71 A;
t
p
= 0.1 ms; V
DD
≤
25 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
unclamped inductive load; I
D
= 7.1 A;
t
p
= 0.01 ms; V
DD
≤
25 V; R
GS
= 50
;
V
GS
= 10 V
-
250
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1] [2]
-
2.5
mJ
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