參數(shù)資料
型號(hào)： PF48F2P0ZB00
廠商： Intel Corp.
英文描述： Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
中文描述： 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁數(shù)： 68/102頁
文件大小： 1609K
代理商： PF48F2P0ZB00
1-Gbit P30 Family
April 2005
68
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
To read data from the device (other than an erase-suspended block), the Read Array command must
be issued. During Erase Suspend, a Program command can be issued to any block other than the
erase-suspended block. Block erase cannot resume until program operations initiated during erase
suspend complete. Read Array, Read Status Register, Read Device Identifier, CFI Query, and Erase
Resume are valid commands during Erase Suspend. Additionally, Clear Status Register, Program,
Program Suspend, Block Lock, Block Unlock, and Block Lock-Down are valid commands during
Erase Suspend.
During an erase suspend, deasserting CE# places the device in standby, reducing active current.
V
PP
must remain at a valid level, and WP# must remain unchanged while in erase suspend. If
RST# is asserted, the device is reset.
12.3
Erase Resume
The Erase Resume command instructs the device to continue erasing, and automatically clears
status register bits SR[7,6]. This command can be written to any address. If status register error bits
are set, the Status Register should be cleared before issuing the next instruction. RST# must remain
deasserted (see
Figure 41, “Program Suspend/Resume Flowchart” on page 86
).
12.4
Erase Protection
When V
PP
= V
IL
, absolute hardware erase protection is provided for all device blocks. If V
PP
is
below V
PPLK
, erase operations halt and SR[3] is set indicating a V
PP
-level error.
相關(guān)PDF資料
PDF描述
PF48F3P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F4P0ZB00 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
PF48F0P0VBQ0 Intel StrataFlash Embedded Memory
PF48F4444PPVBQ0 Intel StrataFlash Embedded Memory
PF48F2P0VBQ0 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F2P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F3000P0ZBQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
PF48F3000P0ZBQ0A 功能描述:IC FLASH 128MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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