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參數(shù)資料
| 型號(hào)： | PDM41532SA12TITY |
| 廠商： | IXYS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 230K |
| 代理商： | PDM41532SA12TITY |
PDM41532
Rev. 1.3 - 4/10/98
3
PRELIMINARY
1
2
3
4
5
6
7
8
9
10
11
12
Operating Mode
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Mode
CE
OE
WE
LB
UB
I/O7-I/O0
I/O15-I/O8
Power
Read
L
L
H
L
L
Output
Output
I
CC
H
L
High Impedance
Output
I
CC
L
H
Output
High Impedance
I
CC
Write
L
X
L
L
L
Input
Input
I
CC
H
L
High Impedance
Input
I
CC
L
H
Input
High Impedance
I
CC
Output Disable
L
H
H
X
x
High Impedance
High Impedance
I
CC
L
X
X
H
H
High Impedance
High Impedance
I
CC
Standby
H
X
X
X
X
High Impedance
High Impedance
I
SB
Absolute Maximum Ratings
(1)
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
2. Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The
calculation should be of the form
: T
j
= T
a
ture, P is average operating power and
this product, use the following
θ
ja
values:
+ P *
θ
ja
the thermal resistance of the package. For
θ
ja
where T
a
is the ambient tempera-
SOJ: 59
o
TSOP: 87
o
C/W
C/W
Symbol
Rating
Com’l.
Ind.
Unit
V
TERM
Terminal Voltage with Respect to V
SS
–0.5 to +7.0
–0.5 to +7.0
V
T
BIAS
Temperature Under Bias
–55 to +125
–65 to +135
°
C
T
STG
Storage Temperature
–55 to +125
–65 to +150
°
C
P
T
Power Dissipation
1.5
1.5
W
I
OUT
DC Output Current
50
50
mA
T
j
Maximum Junction Temperature
(2)
125
145
°
C
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