參數(shù)資料
型號: PD55003S
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS The LdmoST Plastic FAMILY
中文描述: 射頻功率晶體管LdmoST塑料家庭
文件頁數(shù): 3/19頁
文件大小: 309K
代理商: PD55003S
3/19
PD55003 - PD55003S
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
0
5
10
VDD, DRAIN VOLTAGE (V)
15
20
25
30
1
10
100
C
Ciss
Coss
Crss
f= 1 MHz
Drain Current vs. Gate Voltage
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
3.5
4
4.5
5
5.5
6
0
0.5
1
1.5
2
2.5
I
Vdd=10V
Gate-Source Voltage vs. Case Temperature
-25
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
0.94
0.96
0.98
1
1.02
1.04
1.06
V
Vds= 10 V
Id= .25 A
Id= .5 A
Id= 1 A
Id= 1.5 A
Id= 2.5 A
Id= 2 A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD55003S-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55003S-E-E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD55003STR 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55003STR-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD55003TR 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray