<pre id="jm7fr"><fieldset id="jm7fr"></fieldset></pre><dl id="jm7fr"><xmp id="jm7fr"><em id="jm7fr"></em><dl id="jm7fr"></dl>
  • <big id="jm7fr"><s id="jm7fr"></s></big>
    參數(shù)資料
    型號: PC28F256J3C-150
    廠商: Intel Corp.
    英文描述: Intel StrataFlash Memory (J3)
    中文描述: 英特爾StrataFlash存儲器(J3)
    文件頁數(shù): 35/72頁
    文件大?。?/td> 905K
    代理商: PC28F256J3C-150
    256-Mbit J3 (x8/x16)
    Datasheet
    35
    9.2
    Device Commands
    When the V
    PEN
    voltage
    V
    PENLK
    , only read operations from the Status Register, CFI, identifier
    codes, or blocks are enabled. Placing V
    PENH
    on V
    PEN
    additionally enables block erase, program,
    and lock-bit configuration operations. Device operations are selected by writing specific
    commands into the CUI.
    Table 14, “Command Bus-Cycle Definitions” on page 35
    defines these
    commands.
    Table 14. Command Bus-Cycle Definitions (Sheet 1 of 2)
    Command
    Scalable or
    Basic
    Command
    Set
    (2)
    Bus
    Cycles
    Req’d.
    First Bus Cycle
    Second Bus Cycle
    Notes
    Oper
    (3)
    Addr
    (4)
    Data
    (5,6)
    Oper
    (3)
    Addr
    (4)
    Data
    (5,6)
    Read Array
    SCS/BCS
    1
    Write
    X
    0xFF
    1
    Read Identifier Codes
    SCS/BCS
    2
    Write
    X
    0X90
    Read
    IA
    ID
    1,7
    Read Query
    SCS
    2
    Write
    X
    0x98
    Read
    QA
    QD
    1
    Read Status Register
    SCS/BCS
    2
    Write
    X
    0x70
    Read
    X
    SRD
    1,8
    Clear Status Register
    SCS/BCS
    1
    Write
    X
    0x50
    1
    Write to Buffer
    SCS/BCS
    > 2
    Write
    BA
    0xE8
    Write
    BA
    N
    1,9, 10,
    11
    Word/Byte Program
    SCS/BCS
    2
    Write
    X
    0x40 or
    0x10
    Write
    PA
    PD
    1,12,13
    Block Erase
    SCS/BCS
    2
    Write
    BA
    0x20
    Write
    BA
    0xD0
    1,11,12
    Block Erase, Program
    Suspend
    SCS/BCS
    1
    Write
    X
    0xB0
    1,12,14
    Block Erase, Program
    Resume
    SCS/BCS
    1
    Write
    X
    0xD0
    1,12
    Configuration
    SCS
    2
    Write
    X
    0xB8
    Write
    X
    CC
    1
    Set Block Lock-Bit
    SCS
    2
    Write
    X
    0x60
    Write
    BA
    0x01
    1
    相關(guān)PDF資料
    PDF描述
    PC28F128J3A-110 Intel StrataFlash Memory (J3)
    PC28F128J3A-115 Intel StrataFlash Memory (J3)
    PC28F640J3C-125 Intel StrataFlash Memory (J3)
    PC28F640J3C-150 Intel StrataFlash Memory (J3)
    PC28F640J3A-110 Intel StrataFlash Memory (J3)
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    PC28F256J3D95A 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
    PC28F256J3D95B 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
    PC28F256J3F950 制造商:Micron Technology Inc 功能描述:256MB, TURLOCK EBGA 3.0 LF - Trays
    PC28F256J3F95A 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
    PC28F256J3F95B 制造商:Micron Technology Inc 功能描述:16MX16 NOR FLASH PLASTIC PBF TBGA 3.0V - Tape and Reel