參數(shù)資料
型號(hào): PA28F400CV-B80
廠商: Intel Corp.
英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位SmartVoltage啟動(dòng)塊閃存系列
文件頁(yè)數(shù): 34/50頁(yè)
文件大?。?/td> 559K
代理商: PA28F400CV-B80
28F400BX-T/B, 28F004BX-T/B
DC CHARACTERISTICS: EXTENDED TEMPERATURE OPERATION
(Continued)
Symbol
Parameter
Notes
Min
Typ Max Unit
Test Conditions
V
OH2
Output High Voltage (CMOS)
0.85 V
CC
V
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
CC
b
0.4
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Erase/Write Operations
7
11.4
12.0 12.6
V
V
PPH
V
PP
during Erase/Write Operations
8
10.8
12.0 13.2
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
Unlock Voltage
2.0
V
V
HH
11.5
13.0
V
Boot Block Write/Erase
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the device is read while in Erase Suspend Mode, current draw is the sum
of I
and I
.
3. Block Erases and Word/Byte Writes are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and
V
PPL
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical in static operation.
6. CMOS Inputs are either V
CC
g
0.2V or GND
g
0.2V. TTL Inputs are either V
IL
or V
IH
.
7. V
PP
e
12.0V
g
5% for applications requiring 100,000 block erase cycles.
8. V
e
12.0V
g
10% for applications requiring wider V
tolerances at 100 block erase cycles.
9. For the 28F004BX address pin A
10
follows the C
OUT
capacitance numbers.
10. I
CCR
typical is 20 mA for X16 Active Read Current.
CAPACITANCE
(1)
T
A
e
25
§
C, f
e
1 MHz
Symbol
Parameter
Typ
Max
Unit
Conditions
C
IN
Input Capacitance
6
8
pF
V
IN
e
0V
V
OUT
e
0V
C
OUT
Output Capacitance
10
12
pF
NOTE:
1. Sampled, not 100% tested.
34
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