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參數(shù)資料
| 型號(hào)： | PA28F400BX-T60 |
| 廠商： | INTEL CORP |
| 元件分類(lèi)： | PROM |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 256K X 16 FLASH 12V PROM, 60 ns, PDSO40 |
| 封裝： | 1.110 X 0.525 INCH, PLASTIC, SOP-40 |
| 文件頁(yè)數(shù)： | 44/50頁(yè) |
| 文件大?。?/td> | 559K |
| 代理商： | PA28F400BX-T60 |
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28F400BX-T/B, 28F004BX-T/B
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICSDWE
Y
Controlled Write Operations
(1)
(Continued)
Versions
(4)
T28F400BX-80
(9)
T28F004BX-80
(9)
Unit
Symbol
Parameter
Notes
Min
Max
t
WHQV3
Duration of Erase Operation
(Parameter)
2, 5
0.4
s
t
WHQV4
Duration of Erase Operation (Main)
2, 5
0.7
s
t
QVVL
t
VPH
V
PP
Hold from Valid SRD
RP
Y
V
HH
Hold from Valid SRD
5, 8
0
ns
t
QVPH
t
PHH
6, 8
0
ns
t
PHBR
Boot-Block Relock Delay
7, 8
100
ns
t
IR
Input Rise Time
10
ns
t
IF
Input Fall Time
10
ns
NOTES:
1. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
characteristics during Read Mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled inter-
nally which includes verify and margining operations.
3. Refer to command definition table for valid A
IN
.
4. Refer to command definition table for valid D
IN
.
5. Program/Erase durations are measured to valid SRD data (successful operation, SR.7
e
1).
6. For Boot Block Program/Erase, RP
Y
should be held at V
HH
until operation completes successfully.
7. Time t
PHBR
is required for successful relocking of the Boot Block.
8. Sampled but not 100% tested.
9. See Standard Test Configuration.
EXTENDED TEMPERATURE OPERATION
BLOCK ERASE AND WORD/BYTE WRITE PERFORMANCE
V
PP
e
12.0V
g
5%
Parameter
Notes
T28F400BX-80
T28F004BX-80
Unit
Min
Typ
(1)
Max
Boot/Parameter
Block Erase Time
2
1.5
10.5
s
Main Block
Erase Time
2
3.0
18
s
Main Block Byte
Program Time
2
1.4
5.0
s
Main Block Word
Program Time
2
0.7
2.5
s
NOTES:
1. 25
§
C
2. Excludes System-Level Overhead.
44
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PDF描述 |
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| PA28F400BX-T80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BL-T150 | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
相關(guān)代理商/技術(shù)參數(shù) |
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| PA28F400BX-T70 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM |
| PA28F400BX-T80 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-B60 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-B80 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-T60 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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