參數(shù)資料
型號: PA28F400BX-B80
廠商: INTEL CORP
元件分類: PROM
英文描述: 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 256K X 16 FLASH 12V PROM, 80 ns, PDSO40
封裝: 1.110 X 0.525 INCH, PLASTIC, SOP-40
文件頁數(shù): 44/50頁
文件大?。?/td> 559K
代理商: PA28F400BX-B80
28F400BX-T/B, 28F004BX-T/B
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICSDWE
Y
Controlled Write Operations
(1)
(Continued)
Versions
(4)
T28F400BX-80
(9)
T28F004BX-80
(9)
Unit
Symbol
Parameter
Notes
Min
Max
t
WHQV3
Duration of Erase Operation
(Parameter)
2, 5
0.4
s
t
WHQV4
Duration of Erase Operation (Main)
2, 5
0.7
s
t
QVVL
t
VPH
V
PP
Hold from Valid SRD
RP
Y
V
HH
Hold from Valid SRD
5, 8
0
ns
t
QVPH
t
PHH
6, 8
0
ns
t
PHBR
Boot-Block Relock Delay
7, 8
100
ns
t
IR
Input Rise Time
10
ns
t
IF
Input Fall Time
10
ns
NOTES:
1. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
characteristics during Read Mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled inter-
nally which includes verify and margining operations.
3. Refer to command definition table for valid A
IN
.
4. Refer to command definition table for valid D
IN
.
5. Program/Erase durations are measured to valid SRD data (successful operation, SR.7
e
1).
6. For Boot Block Program/Erase, RP
Y
should be held at V
HH
until operation completes successfully.
7. Time t
PHBR
is required for successful relocking of the Boot Block.
8. Sampled but not 100% tested.
9. See Standard Test Configuration.
EXTENDED TEMPERATURE OPERATION
BLOCK ERASE AND WORD/BYTE WRITE PERFORMANCE
V
PP
e
12.0V
g
5%
Parameter
Notes
T28F400BX-80
T28F004BX-80
Unit
Min
Typ
(1)
Max
Boot/Parameter
Block Erase Time
2
1.5
10.5
s
Main Block
Erase Time
2
3.0
18
s
Main Block Byte
Program Time
2
1.4
5.0
s
Main Block Word
Program Time
2
0.7
2.5
s
NOTES:
1. 25
§
C
2. Excludes System-Level Overhead.
44
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