• 參數(shù)資料
    型號: PA28F400BX-B60
    廠商: INTEL CORP
    元件分類: PROM
    英文描述: LENS, ROUND, RED; Colour:Red; Diameter, external:29mm RoHS Compliant: Yes
    中文描述: 256K X 16 FLASH 12V PROM, 60 ns, PDSO40
    封裝: 1.110 X 0.525 INCH, PLASTIC, SOP-40
    文件頁數(shù): 24/50頁
    文件大小: 559K
    代理商: PA28F400BX-B60
    28F400BX-T/B, 28F004BX-T/B
    During Erase Suspend mode, the chip can go into a
    pseudo-standby mode by taking CE
    Y
    to V
    IH
    and the
    active current is now a maximum of 10 mA. If the
    chip is enabled while in this mode by taking CE
    Y
    to
    V
    IL
    , the Erase Resume command can be issued to
    resume the erase operation.
    Upon completion of reads from any block other than
    the block being erased, the Erase Resume com-
    mand must be issued. When the Erase Resume
    command is given, the WSM will continue with the
    erase sequence and complete erasing the block. As
    with the end of erase, the status register must be
    read, cleared, and the next instruction issued in or-
    der to continue.
    4.4.6 EXTENDED CYCLING
    Intel has designed extended cycling capability into
    its ETOX III flash memory technology. The 4-Mbit
    boot block flash family is designed for 100,000 pro-
    gram/erase cycles on each of the seven blocks. The
    combination of low electric fields, clean oxide pro-
    cessing and minimized oxide area per memory cell
    subjected to the tunneling electric field, results in
    very high cycling capability.
    24
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