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參數(shù)資料
| 型號： | PA28F400BV-B80 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 512K X 8 FLASH 5V PROM, 150 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 47/50頁 |
| 文件大?。?/td> | 559K |
| 代理商： | PA28F400BV-B80 |
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28F400BX-T/B, 28F004BX-T/B
AC CHARACTERISTICSDCE
Y
-CONTROLLED WRITE OPERATIONS
(1, 9)
(Continued)
Versions
V
CC
g
5%
28F400BX-60
(10)
28F004BX-60
(10)
Unit
V
CC
g
10%
28F400BX-60
(11)
28F004BX-60
(11)
28F400BX-80
(11)
28F004BX-80
(11)
28F400BX-120
(11)
28F004BX-120
(11)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
IR
Input Rise Time
10
10
10
10
ns
t
IF
Input Fall Time
10
10
10
10
ns
NOTES:
1. Chip-Enable Controlled Writes: Write operations are driven by the valid combination of CE
Y
and WE
Y
in systems where
CE
Y
defines the write pulse-width (within a longer WE
Y
timing waveform), all set-up, hold and inactive WE
Y
times
should be measured relative to the CE
Y
waveform.
2, 3, 4, 5, 6, 7, 8: Refer to AC Characteristics notes for WE
Y
-Controlled Write Operations.
9. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
Characteristics during Read Mode.
10. See High Speed Test Configuration.
11. See Standard Test Configuration.
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICSDCE
Y
-CONTROLLED WRITE OPERATIONS
(1, 9)
Versions
T28F400BX-80
(10)
T28F004BX-80
(10)
Unit
Symbol
Parameter
Notes
Min
Max
t
AVAV
t
PHEL
t
WLEL
t
PHHEH
t
VPEH
t
AVEH
t
DVEH
t
ELEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHQV1
t
WC
t
PS
t
WS
t
PHS
t
VPS
t
AS
t
DS
t
CP
t
DH
t
AH
t
WH
t
CPH
Write Cycle Time
80
ns
RP
Y
High Recovery to CE
Y
Going Low
220
ns
WE
Y
Setup to CE
Y
Going Low
0
ns
RP
Y
V
HH
Setup to CE
Y
Going High
V
PP
Setup to CE
Y
Going High
Address Setup to CE
Y
Going High
6, 8
100
ns
5, 8
100
ns
3
60
ns
Data Setup to CE
Y
Going High
4
60
ns
CE
Y
Pulse Width
60
ns
Data Hold from CE
Y
High
4
0
ns
Address Hold from CE
Y
High
3
10
ns
WE
Y
Hold from CE
Y
High
10
ns
CE
Y
Pulse Width High
20
ns
Duration of Word/Byte Programming
Operation
2, 5
7
m
s
47
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PA28F400BV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVB120 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVT60 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVT80 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BX-T60 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PA28F400BVT120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVT60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-T60 | 制造商:Intel 功能描述:NOR Flash, 256K x 16, 44 Pin, Plastic, SOP |
| PA28F400BVT80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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