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參數(shù)資料
| 型號(hào)： | PA28F400BV-B60 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 512K X 8 FLASH 5V PROM, 110 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 42/50頁 |
| 文件大?。?/td> | 559K |
| 代理商： | PA28F400BV-B60 |
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28F400BX-T/B, 28F004BX-T/B
AC CHARACTERISTICSDWE
Y
Controlled Write Operations
(1)
(Continued)
Versions
V
CC
g
5%
28F400BX-60
(9)
28F004BX-60
(9)
Unit
V
CC
g
10%
28F400BX-60
(10)
28F004BX-60
(10)
28F400BX-80
(10)
28F004BX-80
(10)
28F400BX-120
(10)
28F004BX-120
(10)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
t
QVPH
t
PHH
RP
Y
V
HH
Hold
from Valid SRD
6, 8
0
0
0
0
ns
t
PHBR
Boot-Block
Relock Delay
7, 8
100
100
100
100
ns
t
IR
Input Rise Time
10
10
10
10
ns
t
IF
Input Fall Time
10
10
10
10
ns
NOTES:
1. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
characteristics during Read Mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled inter-
nally which includes verify and margining operations.
3. Refer to command definition table for valid A
IN
.
4. Refer to command definition table for valid D
IN
.
5. Program/Erase durations are measured to valid SRD data (successful operation, SR.7
e
1).
6. For Boot Block Program/Erase, RP
Y
should be held at V
HH
until operation completes successfully.
7. Time t
PHBR
is required for successful relocking of the Boot Block.
8. Sampled but not 100% tested.
9. See High Speed Test Configuration.
10. See Standard Test Configuration.
BLOCK ERASE AND WORD/BYTE WRITE PERFORMANCE
V
PP
e
12.0V
g
5%
Parameter
Notes
28F400BX-60
28F004BX-60
28F400BX-80
28F004BX-80
28F400BX-120
28F004BX-120
Unit
Min
Typ
(1)
Max
Min
Typ
(1)
Max
Min
Typ
(1)
Max
Boot/Parameter
Block Erase Time
2
1.0
7
1.0
7
1.0
7
s
Main Block
Erase Time
2
2.4
14
2.4
14
2.4
14
s
Main Block Byte
Program Time
2
1.2
4.2
1.2
4.2
1.2
4.2
s
Main Block Word
Program Time
2
0.6
2.1
0.6
2.1
0.6
2.1
s
NOTES:
1. 25
§
C
2. Excludes System-Level Overhead.
42
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PA28F400BL-B150 | 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVB120 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVT60 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PA28F400BVB80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVT120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVT60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-T60 | 制造商:Intel 功能描述:NOR Flash, 256K x 16, 44 Pin, Plastic, SOP |
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