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參數資料
| 型號： | PA28F400BL-T150 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 512K X 8 FLASH 12V PROM, 150 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁數： | 49/50頁 |
| 文件大?。?/td> | 559K |
| 代理商： | PA28F400BL-T150 |
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28F400BX-T/B, 28F004BX-T/B
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICSDCE
Y
-CONTROLLED WRITE OPERATIONS
(1, 9)
(Continued)
Versions
T28F400BX-80
(10)
T28F004BX-80
(10)
Unit
Symbol
Parameter
Notes
Min
Max
t
EHQV2
t
EHQV3
t
EHQV4
t
QVVL
t
QVPH
t
PHBR
Duration of Erase Operation (Boot)
2, 5, 6
0.4
s
Duration of Erase Operation (Parameter)
2, 5
0.4
s
Duration of Erase Operation (Main)
2, 5
0.7
s
t
VPH
t
PHH
V
PP
Hold from Valid SRD
RP
Y
V
HH
Hold from Valid SRD
Boot-Block Relock Delay
5, 8
0
ns
6, 8
0
ns
7
100
ns
t
IR
t
IF
Input Rise Time
10
ns
Input Fall Time
10
ns
NOTES:
1. Chip-Enable Controlled Writes: Write operations are driven by the valid combination of CE
Y
and WE
Y
in systems where
CE
Y
defines the write pulse-width (within a longer WE
Y
timing waveform), all set-up, hold and inactive WE
Y
times
should be measured relative to the CE
Y
waveform.
2, 3, 4, 5, 6, 7, 8: Refer to AC Characteristics for WE
Y
-Controlled Write Operations.
9. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
Characteristics during Read Mode.
10. See Standard Test Configuration.
ORDERING INFORMATION
290451–18
VALID COMBINATIONS:
E28F400BX-T60
E28F400BX-B60
E28F400BX-T80
E28F400BX-B80
E28F400BX-T120
E28F400BX-B120
PA28F400BX-T60
PA28F400BX-B60
PA28F400BX-T80
PA28F400BX-B80
PA28F400BX-T120
PA28F400BX-B120
TE28F400BX-T80
TE28F400BX-B80
TB28F400BX-T80
TB28F400BX-B80
290451–30
VALID COMBINATIONS:
E28F004BX-T60
E28F004BX-B60
E28F004BX-T80
E28F004BX-B80
TE28F004BX-T80
TE28F004BX-B80
E28F004BX-T120
E28F004BX-B120
49
相關PDF資料 |
PDF描述 |
|---|---|
| PA28F400BV-T60 | POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90% |
| PA28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVB80 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVT120 | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PA28F400BVB120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVB60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BVB80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BV-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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