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參數(shù)資料
| 型號(hào)： | PA28F200BX-T120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 120 ns, PDSO44 |
| 封裝： | 1.110 X 0.525 INCH, PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 48/48頁(yè) |
| 文件大小： | 562K |
| 代理商： | PA28F200BX-T120 |
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28F200BX-T/B, 28F002BX-T/B
Revision History
Number
Description
-002
Removed
b
70 speed bin
Integrated
b
70 characteristics into
b
60 speed bin
Added Extended Temperature characteristics
Modified BYTE
Y
Timing Diagram
Improved t
PHQV
, RP
Y
High to Output Delay and t
PHEL
, RP
Y
High Recovery to CE
Y
going low
specifications
-003
PWD changed to RP
Y
for JEDEC standardization compatibility.
Combined V
CC
Read current for 28F200BX Word-wide mode and Byte-wide mode, and
28F002BX Byte-wide mode in DC Characteristics tables.
Change I
PPS
current spec from
g
10
m
A to
g
15
m
A in DC Characteristics tables.
Improved I
CCR
and I
CCW
in DC Characteristics: Extended Temperature Operation table.
Improved t
AVAV
, t
AVQV
, t
ELQV
, t
GLQV
, t
EHQZ
, t
GHQZ
, t
FHQV
and t
FLQZ
specifications for
Extended Temperature Operations AC CharacteristicsDRead and Write Operations.
-004
Added specifications for 120 ns access time product version; 28F200BX-120 and
28F002BX-120.
Included permanent change on write timing parameters for -80 ns product versions. Write
pulse width (t
WP
and t
CP
) increases from 50 ns to 60 ns. Write pulse width high (t
WPH
and
t
CPH
) decreases from 30 ns to 20 ns. Total write cycle time (t
WC
) remains unchanged.
Added I
CCR
test condition note for typical frequency value in DC characteristics table.
Added I
OH
CMOS specification.
Added 28F400BX interface to Intel386
TM
EX Embedded Processor block diagram.
Added description of how to upgrade to SmartVoltage Boot Block products.
-005
Added references to input rise/fall times.
48
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PA28F200CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BVB80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BVB60 | 68K INTGR COM PROC, DMA |
| PA28F200BVB120 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BV-T60 | POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PA28F200BX-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BX-T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| PA28F200BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200CV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200CV-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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