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| 型號： | PA28F200BX-B60 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| 中文描述： | 128K X 16 FLASH 12V PROM, 60 ns, PDSO44 |
| 封裝： | 1.110 X 0.525 INCH, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 45/48頁 |
| 文件大?。?/td> | 562K |
| 代理商： | PA28F200BX-B60 |
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28F200BX-T/B, 28F002BX-T/B
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICS FOR CE
Y
-CONTROLLED WRITE OPERATIONS
(1, 9)
Versions
T28F200BX-80
(10)
T28F002BX-80
(10)
Unit
Symbol
Parameter
Notes
Min
Max
t
AVAV
t
PHEL
t
WC
t
PS
Write Cycle Time
RP
Y
High Recovery
to CE
Y
Going Low
WE
Y
Setup to CE
Y
Going Low
RP
Y
V
HH
Setup to
CE
Y
Going High
V
PP
Setup to CE
Y
Going High
80
ns
220
ns
t
WLEL
t
WS
0
ns
t
PHHEH
t
PHS
6, 8
100
ns
t
VPEH
t
VPS
5, 8
100
ns
t
AVEH
t
AS
Address Setup to
CE
Y
Going High
Data Setup to CE
Y
Going High
CE
Y
Pulse Width
3
60
ns
t
DVEH
t
DS
4
60
ns
t
ELEH
t
EHDX
t
CP
t
DH
60
ns
Data Hold from
CE
Y
High
4
0
ns
t
EHAX
t
AH
Address Hold
from CE
Y
High
WE
Y
Hold from CE
Y
High
CE
Y
Pulse
Width High
3
10
ns
t
EHWH
t
EHEL
t
WH
t
CPH
10
ns
20
ns
t
EHQV1
Duration of Word/Byte
Programming
Operation
2, 5
7
m
s
t
EHQV2
Duration of Erase
Operation (Boot)
2, 5, 6
0.4
s
t
EHQV3
Duration of Erase
Operation (Parameter)
2, 5
0.4
s
t
EHQV4
Duration of Erase
Operation (Main)
2, 5
0.7
s
t
QVVL
t
VPH
V
PP
Hold from
Valid SRD
RP
Y
V
HH
Hold
from Valid SRD
5, 8
0
ns
t
QVPH
t
PHH
6, 8
0
ns
t
PHBR
Boot-Block Relock Delay
7
100
ns
t
IR
t
IF
Input Rise Time
10
ns
Input Fall Time
10
ns
NOTES:
1. Ship-Enable Controlled Writes: Write operations are driven by the valid combination of CE
Y
and WE
Y
in systems where
CE
Y
defines the write pulse-width (within a longer WE
Y
timing waveform), all set-up, hold and inactive WE
Y
time should
be measured relative to the CE
Y
waveform.
2, 3, 4, 5, 6, 7, 8: Refer to AC Characteristics for WE
Y
-Controlled Write Operations.
9. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
Characteristics during Read Mode.
10. See Standard Test Configuration.
45
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