參數(shù)資料
型號: PA28F200B5B60
廠商: INTEL CORP
元件分類: PROM
英文描述: CROSSOVER,RF-RF,DC-6GHZ,50 OHM,SMT
中文描述: 256K X 8 FLASH 5V PROM, 70 ns, PDSO44
封裝: 0.525 X 1.110 INCH, PLASTIC, SOP-44
文件頁數(shù): 28/38頁
文件大?。?/td> 501K
代理商: PA28F200B5B60
SMART 5 BOOT BLOCK MEMORY FAMILY
E
28
ADVANCE INFORMATION
5.4
DC Characteristics
—Commercial and Extended Temperature
(Continued)
Temp
Comm
Extended
Sym
Parameter
Note
Typ
Max
Typ
Max Unit
Test Condition
I
PPW
V
PP
Program Current
1,4
25
30
mA
V
PP
= V
PPH
1 (at 5 V)
(Word or Byte Mode)
20
25
V
PP
= V
PPH
2 (at 12 V)
I
PPE
V
PP
Erase Current
1,4
20
25
mA
V
PP
= V
PPH
1 (at 5 V)
15
20
V
PP
= V
PPH
2 (at 12 V)
I
PPES
V
PP
Erase Susp Current
1
200
200
μA
V
PP
= V
PPH
, Block Erase Suspend
I
RP#
RP# Unlock Current
1,4
500
500
μA
RP# = V
HH
(to unlock Boot Block)
I
ID
A
9
Identifier Current
1,4
500
500
μA
A
9
= V
ID
5.4
DC Characteristics
—Commercial and Extended Temperature
(Continued)
Temp
Comm/Ext
Sym
Parameter
Note
Min
Max
Unit
Test Condition
V
ID
A
9
Intelligent Identifier
Voltage
11.4
12.6
V
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+
0.5 V
V
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
Min, I
OL
= 5.8 mA
V
OH
1
Output High Voltage (TTL)
2.4
V
V
CC
= V
CC
Min, I
OH
= –2.5 mA
V
OH
2
Output High Voltage (CMOS)
0.85 x
V
CC
V
V
CC
= V
CC
Min, I
OH
= –2.5 mA
V
CC
0.4V
V
V
CC
= V
CC
Min, I
OH
= –100
μ
A
V
PPLK
V
PP
Lock-Out Voltage
3
0.0
1.5
V
Complete Data Protection
V
PPH
1 V
PP
(Prog/Erase Operations)
4.5
5.5
V
V
PP
at 5 V
V
PPH
2 V
PP
(Prog/Erase Operations)
11.4
12.6
V
V
PP
at 12 V
V
LKO
V
CC
Erase/Prog Lock Voltage
2.0
V
V
HH
RP# Unlock Voltage
11.4
12.6
V
Boot Block Program/Erase
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