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參數(shù)資料
| 型號： | PA28F016SC-95 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
| 中文描述： | 2M X 8 FLASH 3.3V PROM, 95 ns, PDSO44 |
| 封裝： | 13.30 X 28.20 MM, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 35/42頁 |
| 文件大小： | 725K |
| 代理商： | PA28F016SC-95 |
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E
6.5
T
A
= 0°C to +70°C
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
35
PRELIMINARY
AC Characteristics
—Read-Only Operations
(1)
—Commercial Temperature
5 V ± 5% V
CC
-85/-95
(5)
Versions
(4)
5 V ± 10% V
CC
-90/-100
(6)
-120
Unit
3.3 V ± 0.3 V V
CC
-120
-150
2.7 V
3.6 V V
CC
-150
-170
#
Sym
Parameter
Notes Min Max Min Max Min Max Min Max Min Max
85
90
120
95
100
120
85
90
95
100
85
90
95
100
40
45
400
400
R1 t
AVAV
Read Cycle
Time
Address to
Output Delay 16 Mbit
CE# to Output 4, 8 Mbit
Delay
OE# to Output Delay
RP# High to Output
Delay
CE# to Output in Low Z
OE# to Output in Low Z
CE# High to Output in
High Z
OE# High to Output in
High Z
Output Hold from
Address, CE# or OE#
Change, Whichever
Occurs First
4, 8 Mbit
16 Mbit
4, 8 Mbit
150
150
170
170
ns
ns
ns
ns
ns
ns
ns
ns
R2 t
AVQV
120
120
120
120
50
400/
600
(7)
150
150
150
150
55
600
170
170
170
170
55
600
R3 t
ELQV
2
2
2
16 Mbit
R4 t
GLQV
R5 t
PHQV
R6 t
ELQX
R7 t
GLQX
R8 t
EHQZ
3
3
3
0
0
0
0
0
0
0
0
0
0
ns
ns
ns
55
55
55
55
55
R9 t
GHQZ
3
10
10
15
20
25
ns
R10 t
OH
3
0
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
5.
See AC Input/Output Reference Waveform for maximum allowable input slew rate.
OE# may be delayed up to t
ELQV
–t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, not 100% tested.
See
Ordering Information
for device speeds (valid operational combinations).
See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Speed
Configuration) for testing characteristics.
See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration)
for testing characteristics.
Valid for 3.3 V V
CC
read operations.
6.
7.
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