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參數(shù)資料
| 型號： | P89C535NBAA |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | CMOS single-chip 8-bit microcontrollers with FLASH program memory |
| 中文描述： | 8-BIT, FLASH, MICROCONTROLLER, PQCC44 |
| 文件頁數(shù)： | 26/35頁 |
| 文件大?。?/td> | 221K |
| 代理商： | P89C535NBAA |
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Philips Semiconductors
Preliminary specification
89C535/89C536/89C538
CMOS single-chip 8-bit microcontrollers
with FLASH program memory
1997 Jun 05
26
System Considerations
During the switch between active and standby conditions, transient
current peaks are produced on the rising and falling edges of Chip
Enable. The magnitude of these transient current peaks is
dependent on the output capacitance loading of the device. At a
minimum, a 0.1uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between V
CC
and GND,
and between V
PP
and GND to minimize transient effects.
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
CONDITION
C
IN
C
OUT
V
PPH
V
PPH
14
PF
VI
N
= 0V
V
OUT
= 0V
16
pF
Command programming/Data programming/Erase Operation
DC CHARACTERISTICS
T
amb
= 0
°
C to 70
°
C, V
CC
= 5V
±
10%, V
PP
= 12.0V
±
5%
SYMBOL
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
I
LI
Input Leakage Current
V
IN
= GND to V
CC
10
μ
A
I
LO
Output Leakage Current
V
OUT
= GND to V
CC
10
μ
A
I
SB1
I
SB2
Standby V
CC
Current
CE = VI
H
1
mA
CE = V
CC
±
0.3 V
1
100
μ
A
I
CC1
(Read)
Operating V
CC
Current
I
OUT
= 0 mA, f=1 MHz
30
mA
I
CC2
I
OUT
= 0 mA, F=11MHz
50
mA
I
CC3
(Program)
In Programming
50
mA
I
CC4
(Erase)
In Erase
50
mA
I
CC5
(Program Verify)
In Program Verify
50
mA
I
CC6
(Erase Verify)
In erase Verify
50
mA
I
PP1
(Read)
V
PP
Current
V
PP
=12.6 V
100
μ
A
I
PP2
(Program)
In Programming
50
mA
I
PP3
(Erase)
In Erase
50
mA
I
PP4
(Program Verify)
In Program Verify
50
mA
I
PP5
(Erase Verify)
In Erase Verify
50
mA
V
IL
Input Voltage
–0.5 (Note 5)
0.2V
PP
– 0.3
V
V
IH
2.4
V
CC
+0.3V
V
(Note 6)
V
OL
Output Voltage Low
I
OL
=2.1mA
0.45
V
V
OH
NOTES:
1. V
CC
must be applied before V
PP
and removed after V
PP
.
2. V
must not exceed 14V including overshoot.
3. An influence may be had upon device reliability if the device is installed or removed while V
PP
=12V.
4. Do not alter V
from V
to 12V or 12V to V
IL
when CE=V
IL
5. V
IL
min. = –0.5V for pulse width
≤
20ns.
6. If V
is over the specified maximum value, programming operation cannot be guaranteed.
7. All currents are in RMS unless otherwise noted. (Sampled, not 100% tested.).
Output Voltage High
I
OH
=400uA
2.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P89C536 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:80C51 8-bit microcontroller family 16K/64K/512 FLASH |
| P89C536NBAA | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:80C51 8-bit microcontroller family 16K/64K/512 FLASH |
| P89C536NBBB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:80C51 8-bit microcontroller family 16K/64K/512 FLASH |
| P89C538NBAA | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:80C51 8-bit microcontroller family 16K/64K/512 FLASH |
| P89C538NBBB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:80C51 8-bit microcontroller family 16K/64K/512 FLASH |
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