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參數(shù)資料
| 型號： | P4C422 |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| 中文描述： | 高速靜態(tài)256 × 4 CMOS存儲器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 219K |
| 代理商： | P4C422 |
P4C422
Page 2 of 10
Document #
SRAM101
REV. A
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
P4C422
Min
Max
V
OH
V
OL
V
IH
V
IL
V
CL
I
IX
I
OZ
I
OS
Output High Voltage
I
OH
= –5.2 mA, V
CC
= Min.2.4
I
OL
= +8 mA, V
CC
= Min.
V
Output Low Voltage
0.4
V
Input High Voltage
2.1
V
Input Low Voltage
0.8
V
Input Clamp Diode Voltage
I
IN
= –10 mA
GND
≤
V
IN
≤
V
CC
V
OL
≤
V
OUT
≤
V
OH
,
Output Disabled
V
CC
= Max., V
OUT
= GND
–1.5
V
Input Load Current
–10
10
μA
Output Current (High Z)
–10
10
μA
Output Short Circuit
Current
(3)
90
mA
Grade
(2)
Ambient Temp
Gnd
Vcc
Commercial
0°C to 70°C
0V
5.0V ±10%
Military
–55°C to 125°C
0V
5.0V ±10%
Symbol
Parameter
Test Conditions
Unit
Symbol
Parameter
Conditions Typ. Unit
C
IN
C
OUT
Input Capacitance
V
IN
= 0V
5
pF
Output Capacitance V
OUT
= 0V
7
pF
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
I
OUT
Storage Temperature
–65 to +150
°C
DC Output Current
20
mA
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.
4. This parameter is sampled and not 100% tested.
5. Transition time is
≤
3ns for 10, 12, and 15 ns products and
≤
5ns for
20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified I
/I
with a load capacitance of 15 pF (10, 12) or 30 pF (15,
20, 25, 35) as in Fig. 1a and 1b respectively.
6. Transition time is
≤
3ns for 10, 12, and 15 ns products and
≤
5ns for
20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.
7. t
W
is measured at t
WSA
= min.; t
WSA
is measured at t
W
= min.
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Parameter
Dynamic Operating Current
Temperature
Range
Commercial
Military
-10
90
N/A
-12
90
N/A
-15
90
90
-20
90
90
-25
65
90
-35
65
90
Unit
mA
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P4C422-10CC | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10CM | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10DM | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10FC | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10FM | HIGH SPEED 256 x 4 STATIC CMOS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C422-10CC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10CM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10DC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10DM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-10FC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
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