- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385698 > P4C422-12CC (PYRAMID SEMICONDUCTOR CORP) HIGH SPEED 256 x 4 STATIC CMOS RAM PDF資料下載
參數(shù)資料
| 型號： | P4C422-12CC |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| 中文描述： | 256 X 4 STANDARD SRAM, 12 ns, CDIP22 |
| 封裝： | 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-22 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 219K |
| 代理商： | P4C422-12CC |
P4C422
Page 3 of 10
Document #
SRAM101
REV. A
Mode
CS
2
L
CS
1
X
WE
OE
Output
Standby
X
X
High Z
Standby
X
H
X
X
High Z
D
OUT
Disabled
Read
H
L
X
H
High Z
H
L
H
L
D
OUT
High Z
Write
H
L
L
X
recovery times by eliminating the “write recovery glitch.”
Reading is performed with chip selct one (
CS
) LOW, chip
select two (CS
) HIGH, write enable (
WE
) HIGH and
output enable (
OE
) LOW. The information stored in the
addressed word is read out on the noninverting outputs
(O
through O
). The outputs of the memory go to an
inactive high impedance state whenever chip select one
(
CS
) is HIGH, or during the write operation when write
enable (
WE
) is LOW.
An active LOW write enable (
WE
) controls the writing/
reading operation of the memory. When the chip select
one (
CS
) and the write enable (
WE
) are LOW and the chip
select two (CS
) is HIGH, the information on data inputs
(D
through D
) is written into the addressed memory word
and preconditions the output circuitry so that true data is
present at the outputs when the write cycle is complete.
This preconditioning operation insures minimum write
FUNCTIONAL DESCRIPTION
TRUTH TABLE
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10% except as noted, All Temperature Ranges)
(2)
TIMING WAVEFORM OF READ CYCLE
Notes:
H
L
X
HIGH Z = Implies outputs are disabled or off. This condition
is defined as high impedance state for the
P4C422.
= HIGH
= Low
= Don't Care
Sym.
t
RC
t
ACS
t
ZRCS
t
AOS
t
ZROS
t
AA
Read Cycle Time
(5)
Chip Select Time
(5)
Chip Select to High-Z
(6)
Output Enable Time
Output Enable to High-Z
(6)
Address Access Time
(5)
-10*
Min Max
7.5
8
7.5
8
10
-12
Min
12
Max
8
10
8
10
12
-15
Min
15
Max
8
12
8
12
15
-20
Min
20
Max
12
15
12
15
20
-25
Min
25
Max
15
20
15
20
-35
Min
35
Max
Unit
ns
ns
ns
ns
ns
ns
25
*V
CC
= 5V ± 5%
25
30
25
30
35
Parameter
12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P4C422-12CM | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12DM | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12FC | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12FM | HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12LM | HIGH SPEED 256 x 4 STATIC CMOS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C422-12CM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12DC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12DM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12FC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
| P4C422-12FM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 256 x 4 STATIC CMOS RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。