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參數(shù)資料
| 型號： | P4C188-15DMB |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS |
| 中文描述： | 16K X 4 STANDARD SRAM, 15 ns, CDIP22 |
| 封裝： | 0.300 INCH, CERDIP-22 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 215K |
| 代理商： | P4C188-15DMB |
P4C188/188L
Page 2 of 12
Document #
SRAM112
REV A
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Industrial
Commercial
Grade(2)
Ambient
Temperature
–55°C to +125°C
GND
V
CC
–40°C to +85°C
0°C to +70°C
0V
0V
5.0V ± 10%
5.0V ± 10%
0V
5.0V ± 10%
Military
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
5
7
Unit
pF
pF
CAPACITANCES
(4)
V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz
n/a = Not Applicable
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
and I
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Typ.
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
≥
V
Mil.
V
= Max ., Ind./Com’l.
f = Max., Outputs Open
___
___
40
35
___
___
___
___
20
15
40
n/a
2.7
n/a
mA
mA
___
___
CE
≥
V
Mil.
V
= Max., Ind./Com’l.
f = 0, Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC
= Min., I
IN
= 18 mA
I
OL
= +8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max. Mil.
V
IN
= GND to V
CC
Com’l.
V
CC
= Max.,
CE
= V
IH
, Mil.
V
OUT
= GND to V
CC
Com’l.
P4C188
Min
2.2
–0.5
(3)
V
CC
–0.2
–0.5
(3)
2.4
–10
–5
–10
–5
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
0.4
+10
+5
+10
+5
P4C188L
Min
2.2
Max
V
CC
+0.5
0.8
–0.5
(3)
V
CC
–0.2
–0.5(3)
2.4
–5
n/a
–5
n/a
V
CC
+0.5
0.2
0.4
–1.2
+5
n/a
+5
n/a
Unit
V
V
V
V
V
V
V
μA
μA
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