參數(shù)資料
型號: P4C188-12JM
廠商: Pyramid Semiconductor Corporation
英文描述: ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
中文描述: 超高速16K的× 4靜態(tài)CMOS五羊
文件頁數(shù): 3/12頁
文件大小: 215K
代理商: P4C188-12JM
P4C188/188L
Page 3 of 12
Document #
SRAM112
REV A
*V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
= V
IL
DATA RETENTION CHARACTERISTICS (P4C188L Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditions
CE
V
CC
–0.2V,
V
IN
V
–0.2V or
V
IN
0.2V
Min
2.0
0
t
RC
§
Typ.*
V
=
2.0V 3.0V
10
15
Max
V
=
2.0V 3.0V
600
900
Unit
V
μA
ns
ns
DATA RETENTION WAVEFORM
*T
A
= +125°C
§
t
RC
= Read Cycle Time
This parameter is guaranteed but not tested.
I
CC
Symbol
Parameter
Temperature
Range
Commercial
Industrial
Dynamic Operating Current*
Military
–10
180
N/A
–12
170
–15
160
–20
155
–25
150
–35
N/A
–45
N/A
Unit
N/A
mA
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A
150
155
160
170
180
N/A
170
160
155
150
145
相關PDF資料
PDF描述
P4C188-12JMB ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
P4C188-12LI ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
P4C188-12LM ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
P4C188-12LMB ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
P4C188-12PM ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
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