參數(shù)資料
型號(hào)： P4C170-55DM
廠商： PYRAMID SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
中文描述： 4K X 4 STANDARD SRAM, 55 ns, CDIP20
封裝： 0.300 INCH, CERDIP-22
文件頁(yè)數(shù)： 2/15頁(yè)
文件大?。?/td> 246K
代理商： P4C170-55DM
P4C168, P4C169, P4C170
Page 2 of 15
Document #
SRAM107
REV A
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
Symbol
Parameter
Conditions Typ. Unit
C
IN
C
OUT
Input Capacitance
V
IN
= 0V
5
pF
Output Capacitance V
OUT
= 0V
7
pF
RECOMMENDED OPERATING CONDITIONS
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to +125°C
Gnd
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
SB
I
SB1
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Output Low Voltage
(TTL Load)
Output Low Voltage
(CMOS Load)
Output High Voltage
(CMOS Load)
Input Leakage Current
Output Leakage Current
Dynamic Operating
Current
Standby Power Supply
Current (TTL Input Levels)
P4C168 only
Standby Power
Supply Current
(CMOS Input Levels)
P4C168 only
Input Clamp Diode Voltage
Output High Voltage
(TTL Load)
Parameter
Symbol
Test Conditions
V
CC
= Min., I
IN
= –18 mA
I
OL
= +8 mA, V
CC
= Min.
V
CC
= Max., V
IN
= GND to V
CC
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
V
CC
= Max., f = Max., Outputs Open
CE
≥
V
, V
= Max., f = Max.,
Outputs Open
CE
≥
V
, V
= Max., f = 0,
Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
Mil.
Comm’l
Mil.
Comm’l
P4C168/169/170
Min
2.2
–0.5(3)
V
CC
–0.2
–0.5(3)
2.4
–10
–5
–10
–5
___
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
+10
+5
+10
+5
Unit
V
V
V
V
V
0.4
V
I
OLC
= +100 μA, V
CC
= Min.
0.2
V
V
OLC
I
OH
= –4 mA, V
CC
= Min.
V
I
OHC
= –100 μA, V
CC
= Min.
V
CC
–0.2
V
V
OHC
μA
I
LO
μA
I
CC
35
mA
15
mA
___
___
130
mA
DC ELECTRICAL CHARACTERISTICS
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