參數(shù)資料
型號(hào): P4C170-25LC
廠商: Pyramid Semiconductor Corporation
英文描述: ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
中文描述: 超高速4K的× 4靜態(tài)CMOS五羊
文件頁數(shù): 3/15頁
文件大?。?/td> 246K
代理商: P4C170-25LC
P4C168, P4C169, P4C170
Page 3 of 15
Document #
SRAM107
REV A
AC CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
§ P4C168 only
P4C170 only
Chip Select/Deselect for P4C169 and P4C170
Min Max Min Max Min Max Min Max Min Max
t
RC
Read Cycle Time
12
15
20
25
35
ns
t
AA
Address Access Time
12
15
20
25
35
ns
t
AC§
Chip Enable Access Time
12
15
20
25
35
ns
t
AC
Chip Select Access Time
8
9
12
15
20
ns
t
OH
Output Hold from Address Change
2
2
2
2
2
ns
t
LZ
Chip Enable to Output in Low Z
2
2
2
2
2
ns
t
HZ
Chip Disable to Output in High Z
7
8
9
10
15
ns
t
OE
Output Enable to Data Valid
8
10
12
15
15
ns
t
OLZ
Output Enable to Output in Low Z
0
0
0
0
0
ns
t
OHZ
Output Disable to Output in High Z
6
7
9
11
15
ns
t
RCS
Read Command Setup Time
0
0
0
0
0
ns
t
RCH
Read Command Hold Time
0
0
0
0
0
ns
t
PU§
Chip Enable to Power Up Time
0
0
0
0
0
ns
t
PD§
Chip Disable to Power Down Time
12
15
20
25
35
ns
Sym
Parameter
Unit
-35
-12
-15
-20
-25
AC CHARACTERISTICS—READ CYCLE (CONTINUED)
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Min Max Min Max Min Max
t
RC
Read Cycle Time
45
55
70
ns
t
AA
Address Access Time
45
55
70
ns
t
AC§
Chip Enable Access Time
45
55
70
ns
t
OH
Output Hold from Address Change
2
2
2
ns
t
LZ
Chip Enable to Output in Low Z
2
2
2
ns
t
HZ
Chip Disable to Output in High Z
25
25
30
ns
t
RCS
Read Command Setup Time
0
0
0
ns
t
RCH
Read Command Hold Time
0
0
0
ns
t
PU§
Chip Enable to Power Up Time
0
0
0
ns
t
PD
§
Chip Disable to Power Down Time
45
55
70
ns
Sym
Parameter
Unit
-45
-55
-70
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