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參數(shù)資料
| 型號(hào)： | P4C147-25LSC |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM |
| 中文描述： | 超高速4K的× 1靜態(tài)CMOS存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | P4C147-25LSC |
P4C147
Page 2 of 10
Document #
SRAM103
REV A
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Grade
(2)
Commercial
Military
Symbol
Parameter
Conditions Typ. Unit
C
IN
C
OUT
Input Capacitance
V
IN
= 0V
5
pF
Output Capacitance V
OUT
= 0V
7
pF
Ambient Temp
0°C to 70°C
-55°C to +125°C
Gnd
0V
0V
V
CC
5.0V
± 10%
5.0V
± 10%
RECOMMENDED OPERATING
CONDITIONS
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
I
SB
I
SB1
Parameter
Symbol
Output High Voltage
(TTL Load)
Output Low Voltage
(TTL Load)
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current (TTL Input Levels)
Standby Power Supply
Current
(CMOS Input Levels)
Test Conditions
I
OH
= –4 mA, V
CC
= Min.
I
OL
= +8 mA, V
CC
= Min
V
CC
= Max., V
IN
= GND to V
CC
CE
≥
V
, V
= Max., Mil.
f=Max., Output Open Comm’l
CE
≥
V
, V
= Max., f= 0, Mil.
Output Open Comm’l
V
IN
≤
0.2V or V
IN
≥
V
CC
-0.2V
P4C147
Min.
2.4
2.2
–0.5
(3)
__
__
__
__
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage (2)
Max.
V
CC
=+0.5
0.8
30
23
15
10
Unit
V
V
V
mA
mA
μA
μA
V
0.4
Symbol
Parameter
Dynamic Operating Current
Unit
-35
-25
-20
-15
-12
Commercial
Military
Temperature
Range
I
CC
POWER DISSIPATION CHARACTERISTICS VS. SPEED
130
N/A
130
N/A
120
145
115
135
100
125
N/A
120
mA
mA
-10
Mil.
Comm’l
–10
–5
+10
+5
Mil.
Comm’l
–10
–5
+10
+5
V
CC
= Max.,
CE
= V
IH
,
V
OUT
= GND to V
CC
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