參數(shù)資料
型號: P4C1298-45CI
廠商: Pyramid Semiconductor Corporation
英文描述: ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
中文描述: 超高速64K的× 4靜態(tài)CMOS存儲器
文件頁數(shù): 5/11頁
文件大?。?/td> 135K
代理商: P4C1298-45CI
P4C1298/L
Page 5 of 11
Document #
SRAM135
REV OR
Notes:
5.
CE
is LOW and
WE
is HIGH for READ cycle.
6.
WE
is HIGH, and address must be valid prior to or coincident with
CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
TIMING WAVEFORM OF READ CYCLE NO. 3 (
CE
CONTROLLED)
(5,6)
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P4C1298-45JC ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
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相關代理商/技術參數(shù)
參數(shù)描述
P4C1298-45CM 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
P4C1298-45CMB 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
P4C1298-45JC 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
P4C1298-45JI 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
P4C1298-45JM 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM