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參數(shù)資料
| 型號(hào)： | P4C1298-15CM |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| 中文描述： | 64K X 4 STANDARD SRAM, 15 ns, CDIP28 |
| 封裝： | 0.300 INCH, CERAMIC, DIP-28 |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | P4C1298-15CM |
P4C1298/L
Page 2 of 11
Document #
SRAM135
REV OR
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Value
–0.5 to +7
Unit
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Symbol
T
BIAS
Parameter
Temperature Under
Bias
Value
–55 to +125
Unit
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Temperature
Military
-55°C to +125°C
Industrial
Commercial
Grade(2)
GND
V
CC
–40°C to +85°C
0°C to +70°C
0V
0V
5.0V ± 10%
5.0V ± 10%
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
5
7
Unit
pF
pF
CAPACITANCES
(4)
V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
and I
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Typ.
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
≥
V
V
CC
= Max ., f = Max., Outputs
Open
___
40
10
mA
mA
___
___
CE
≥
V
V
CC
= Max., f = 0, Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OH
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
Input Leakage Current
Output Leakage Current
Test Conditions
V
CC
= Min., I
IN
= 18 mA
I
OL
= +8 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
V
CC
= Max.
V
IN
= GND to V
CC
V
CC
= Max.,
CE
= V
IH
V
OUT
= GND to V
CC
P4C1298
Min
2.2
–0.5
(3)
V
CC
–0.2
–0.5
(3)
2.4
–5
–5
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
0.4
+5
+5
Unit
V
V
V
V
V
V
V
μA
μA
0V
5.0V ± 10%
___
20
10
___
P4C1298L
Min
2.2
–0.5
(3)
V
CC
–0.2
–0.5
(3)
2.4
–10
–10
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
0.4
+10
+10
___
20
mA
___
N/A
Mil
Ind/Comm
Mil
Ind/Comm
10
mA
N/A
___
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PDF描述 |
|---|---|
| P4C1298-15CMB | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-15JC | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-15JI | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-35JMB | ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P4C1298-15CMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-15JC | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-15JI | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-15JM | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
| P4C1298-15JMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM |
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