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參數資料
| 型號： | P4C1049-35JM |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | HIGH SPEED 512K x 8 STATIC CMOS RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 35 ns, PDSO36 |
| 封裝： | 0.400 INCH, SOJ-36 |
| 文件頁數： | 2/12頁 |
| 文件大?。?/td> | 222K |
| 代理商： | P4C1049-35JM |
P4C1049
Page 2 of 12
Document #
SRAM128
REV OR
P4C1049
Min
2.2
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
P
T
I
OUT
Storage Temperature
–65 to +150
°C
Power Dissipation
1.0
W
DC Output Current
50
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
≥
V
IH
Mil.
V
CC
= Max, Ind./Com’l.
f = Max., Outputs Open
___
___
40
15
10
___
___
CE
≥
V
HC
Mil.
V
CC
= Max, Ind./Com’l.
f = 0, Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Industrial
Commercial
Grade(2)
Ambient
Temperature
–55°C to +125°C
–40°C to +85°C
0°C to +70°C
GND
V
CC
0V
0V
5.0V ± 10%
5.0V ± 10%
0V
5.0V ± 10%
Military
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
8
8
Unit
pF
pF
CAPACITANCES
(4)
V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz
Symbol
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
V
IH
V
IL
V
HC
V
LC
V
OL
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Leakage Current
Test Conditions
V
CC
= Max. Mil.
V
IN
= GND to V
CC
Ind./Com’l.
V
CC
= Max., Mil.
CE
= V
IH
, Ind./Com’l.
V
OUT
= GND to V
CC
–0.3
(3)
V
CC
–0.2
–0.3
(3)
–10
–5
–10
–5
Max
V
CC
+0.3
0.8
V
CC
+0.3
0.2
+10
+5
+10
+5
Typ.
Unit
V
V
V
V
μA
μA
mA
mA
Output Low Voltage
(TTL Load)
I
OL
= +8 mA, V
CC
= Min.
0.4
V
Output High Voltage
(TTL Load)
V
OH
I
OH
= –4 mA, V
CC
= Min.
2.4
V
Output Leakage Current
P4C1049L
Min
2.2
___
___
40
n/a
10
n/a
___
___
–0.3
(3)
V
CC
–0.2
–0.3
(3)
–5
n/a
–5
n/a
Max
V
CC
+0.3
0.8
V
CC
+0.3
0.2
+5
n/a
+5
n/a
0.4
2.4
N/A = Not Applicable
相關PDF資料 |
PDF描述 |
|---|---|
| P4C1049-35JMB | HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36C | HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36I | HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36M | HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36MB | HIGH SPEED 512K x 8 STATIC CMOS RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| P4C1049-35JMB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36C | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36I | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36M | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 512K x 8 STATIC CMOS RAM |
| P4C1049-35L36MB | 制造商:PYRAMID 制造商全稱:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 512K x 8 STATIC CMOS RAM |
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