參數資料
型號: P2010A-08ST
廠商: ON SEMICONDUCTOR
元件分類: XO, clock
英文描述: OTHER CLOCK GENERATOR, PDSO8
封裝: SOIC-8
文件頁數: 5/9頁
文件大?。?/td> 457K
代理商: P2010A-08ST
November 2003
P2010A
rev F
Low Frequency EMI Reduction IC
5 of 9
Notice: The information in this document is subject to change without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to GND
-0.5 to + 7.0
V
TSTG
Storage temperature
-65 to +125
°C
TA
Operating temperature
0 to +70
°C
DC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
VIL
Input Low Voltage
GND –
-
0.8
V
VIH
Input High Voltage
2.0
-
VDD + 0.3
V
IIL
Input Low Current (pull-up resistor on inputs SR0, 1)
-
-35
A
IIH
Input High Current (pull-down resistor on input SSON)
-
35
A
VOL
Output Low Voltage (VDD=3.3V, IOL = 20 mA)
-
0.4
V
VOH
Output High Voltage (VDD=3.3V, IOH = 20 mA)
2.5
-
V
IDD
Static Supply Current
-
0.6
-
mA
ICC
Dynamic Supply Current (3.3V and 15pF loading)
4
6
8
mA
VDD
Operating Voltage
2.7
3.3
5.5
V
tON
Power Up Time (First locked clock cycle after power
up)
0.18
ms
ZOUT
Clock Output Impedance
50
AC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
fIN
Input Frequency when
10
20
30
MHz
tLH*
Output rise time
(Measured at 0.8V to 2.0V)
0.7
0.9
1.1
ns
tHL*
Output fall time
(Measured at 0.8V to 2.0V)
0.6
0.8
1.0
ns
tJC
Jitter (cycle to cycle)
-
360
ps
tD
Output duty cycle
45
50
55
%
*tLH and tHL are measured into a capacitive load of 15pF
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