參數(shù)資料
型號: P0120008P
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: 1W GaAs Power FET (Pb-Free Type)
中文描述: 1W的GaAs功率場效應(yīng)管(無鉛型)
文件頁數(shù): 2/13頁
文件大?。?/td> 596K
代理商: P0120008P
Typical Characteristics
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Vgs=0V
-2.0V
6
-1.5V
-1.0V
-0.5V
Vds (V)
1000
750
500
250
00
2
4
8
Tc (
°
C)
3
4
2
1
50
100
150
200
Transfer Curve
Power Derating Curve
T
00
D
Load-pull Characteristics (Typical Data)
Tc=25°C, Vds=8V
Ids=220mA,
Common Source, Zo=50
(Calibrated to device leads)
0
1
10.0
-
5
5.0
2
3
4
0
0
2.4GHz
0
0
0
S11
S22
1.2GHz
1.2GHz
2.4GHz
1
-
1
-
-
20
-
30
-
4.0
-02
0
0
-04
-.
0
-
0
9
-180
-
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
4.0
2.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
45
13
-15
-4
S
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-2-
Web Site:
www.sei.co.jp/GaAsIC/
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