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Data Sheet
June 1999
ORCA Series 2 FPGAs
Lucent Technologies Inc.
131
Electrical Characteristics
(continued)
* On the OR2TxxB devices, the pull-up resistor will externally pull the pin to a level 1.0 V below V
DD
.
Table 31B. OR2TxxB Electrical Characteristics
OR2TxxB Commercial: V
DD
= 3.0 V to 3.6 V, 0 °C
≤
T
A
≤
70 °C; OR2TxxB Industrial: V
DD
= 3.0 V to 3.6 V, –40 °C
≤
T
A
≤
+85
°C.
Parameter
Symbol
Test Conditions
OR2TxxB
Min
Unit
Max
Input Voltage:
High
Low
Output Voltage:
High
Low
Input Leakage Current
Standby Current:
OR2T15B
OR2T40B
V
IH
V
IL
Input configured as CMOS
80% V
DD
GND – 0.5
V
DD
+ 0.3
15% V
DD
V
V
V
OH
V
OL
I
L
I
DDSB
V
DD
=
min, I
OH
= 6 mA or 3 mA
V
DD
= min,
I
OL
= 12 mA or 6 mA
V
DD
= max, V
IN
= V
SS
or V
DD
OR2TxxB (T
A
= 25 °C, V
DD
= 3.3 V)
internal oscillator running,
no output loads,
inputs at V
DD
or GND
(after configuration)
2.4
—
–10
—
0.4
10
V
V
μA
—
—
5.5
8.0
mA
mA
Standby Current:
OR2T15B
OR2T40B
I
DDSB
OR2TxxB (T
A
= 25 °C, V
DD
= 3.3 V)
internal oscillator stopped,
no output loads,
inputs at V
DD
or GND
(after configuration)
—
—
2.0
4.5
mA
mA
Data Retention Voltage
Input Capacitance
V
DR
C
IN
T
A
= 25 °C
2.3
—
—
8
V
pF
OR2TxxB (T
A
= 25 °C, V
DD
= 3.3 V)
Test frequency = 1 MHz
OR2TxxB (T
A
= 25 °C, V
DD
= 3.3 V)
Test frequency = 1 MHz
—
—
Output Capacitance
C
OUT
—
8
pF
DONE Pull-up Resistor*
M3, M2, M1, and M0
Pull-up Resistors*
I/O Pad Static Pull-up
Current*
I/O Pad Static Pull-down Cur-
rent
I/O Pad Pull-up Resistor*
I/O Pad Pull-down
Resistor
R
DONE
R
M
100k
100k
—
—
I
PU
V
DD
= 3.6 V, V
IN
= V
SS
, T
A
= 0 °C
14.4
50.9
μA
I
PD
V
DD
= 3.6 V, V
IN
= V
DD
, T
A
= 0 °C
26
103
μA
R
PU
R
PD
V
DD
= all, V
IN
= V
SS
, T
A
= 0 °C
V
DD
= all, V
IN
= V
DD
, T
A
= 0 °C
100k
50k
—
—