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參數(shù)資料
| 型號： | OP580 |
| 廠商： | OPTEK TECHNOLOGY INC |
| 元件分類： | 光敏三極管 |
| 英文描述： | Silicon Phototransistor in SMT Plastic Package |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | ROHS COMPLIANT, MINIATURE, LEADLESS, PLASTIC, SMD, LCC-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 268K |
| 代理商： | OP580 |
Non-Contact Position Sensing
Datum detection
Silicon Phototransistor in SMT
Plastic Package
OP580
Wide Acceptance Angle
Fast Response Time
Plastic Leadless Chip Carrier (PLCC)
The OP580 is an NPN silicon phototransistor mounted in a miniature SMT package. The device has a flat window
lens which enables a wide acceptance angle. This device is packaged in a plastic leadless chip carrier that is
compatible with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the
OP280 infrared LED.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.—
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
A subsidiary of
TT electronics plc
Pb
RoHS
Machine automation
Optical encoders
Applications
OP580
900
1100
1000
0%
20%
40%
60%
80%
100%
R
Wavelength (nm)
Relative Response vs. Wavelength
800
700
600
500
400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| OP600A | PHOTOTRANSISTOR | NPN | 890NM PEAK WAVELENGTH | PILL-A |
| OP600B | PHOTOTRANSISTOR | NPN | 890NM PEAK WAVELENGTH | PILL-A |
| OP600C | PHOTOTRANSISTOR | NPN | 890NM PEAK WAVELENGTH | PILL-A |
| OP600 | NPN SILICON PHOTOTRANSISTORS |
| OP600A | NPN Silicon Phototransistor(NPN光敏晶體管，寬接收角，集電極最小電流1.20mA) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OP580 | 制造商:TT Electronics / OPTEK Technology 功能描述:Phototransistor |
| OP580/ABD,029 | 功能描述:MOSFET OP580/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| OP580DA | 功能描述:光電晶體管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| OP581/ABD,029 | 功能描述:MOSFET OP581/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| OP582/ABD,029 | 功能描述:MOSFET OP582/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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