VS = ±15.0 V, VCM
參數(shù)資料
型號: OP184FSZ-REEL
廠商: Analog Devices Inc
文件頁數(shù): 20/24頁
文件大?。?/td> 0K
描述: IC OPAMP GP R-R 4.25MHZ LN 8SOIC
設(shè)計資源: Variable Gain Noninverting Amplifier Using AD5292 and OP184 (CN0112)
Variable Gain Inverting Amplifier Using AD5292 and OP184 (CN0113)
Programmable High Voltage Source with Boosted Output Current Using AD5292, OP184, and MOSFETs (CN0115)
Low-Noise Microwave fractional-N PLL using active loop filter and RF prescaler (CN0174)
標(biāo)準(zhǔn)包裝: 2,500
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 4 V/µs
增益帶寬積: 4.25MHz
電流 - 輸入偏壓: 80nA
電壓 - 輸入偏移: 175µV
電流 - 電源: 2.25mA
電流 - 輸出 / 通道: 10mA
電壓 - 電源,單路/雙路(±): 3 V ~ 36 V,±1.5 V ~ 18 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)
OP184/OP284/OP484
Rev. J | Page 5 of 24
VS = ±15.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 4.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VOS
100
μV
40°C ≤ TA ≤ +125°C
200
μV
VOS
175
μV
40°C ≤ TA ≤ +125°C
375
μV
VOS
150
μV
40°C ≤ TA ≤ +125°C
300
μV
VOS
250
μV
40°C ≤ TA ≤ +125°C
500
μV
Input Bias Current
IB
80
450
nA
40°C ≤ TA ≤ +125°C
575
nA
Input Offset Current
IOS
40°C ≤ TA ≤ +125°C
50
nA
Input Voltage Range
15
+15
V
Common-Mode Rejection Ratio
CMRR
VCM = 14.0 V to +14.0 V, 40°C ≤ TA ≤ +125°C
86
90
dB
VCM = 15.0 V to +15.0 V
80
dB
Large Signal Voltage Gain
AVO
RL = 2 k, 10 V ≤ VO ≤ 10 V
150
1000
V/mV
RL = 2 k, 40°C ≤ TA ≤ +125°C
75
V/mV
Offset Voltage Drift E Grade
ΔVOS/ΔT
0.2
2.00
μV/°C
Bias Current Drift
ΔVB/ΔT
150
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
IL = 1.0 mA
14.8
V
Output Voltage Low
VOL
IL = 1.0 mA
14.875
V
Output Current
IOUT
±10
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±2.0 V to ±18 V, 40°C ≤ TA ≤ +125°C
90
dB
Supply Current/Amplifier
ISY
VO = 0 V, 40°C ≤ TA ≤ +125°C
2.0
mA
Supply Current/Amplifier
ISY
VS = ±18 V, 40°C ≤ TA ≤ +125°C
2.25
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 2 k
2.4
4.0
V/s
Full-Power Bandwidth
BWp
1% distortion, RL = 2 k, VO = 29 V p-p
35
kHz
Settling Time
tS
To 0.01%, 10 V step
4
s
Gain Bandwidth Product
GBP
4.25
MHz
Phase Margin
ΦM
50
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.3
V p-p
Voltage Noise Density
en
f = 1 kHz
3.9
nV/√Hz
Current Noise Density
in
0.4
pA/√Hz
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
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