參數(shù)資料
型號(hào): NZQA6V8XV5T1
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Quad Array for ESD Protection(用于進(jìn)行ESD保護(hù)的四TVS陣列)
中文描述: 100 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: LEAD FREE, PLASTIC, CASE 463B-01, 5 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 38K
代理商: NZQA6V8XV5T1
NZQA5V6XV5T1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni-Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ T
A
= 25
°
C) (Note 1)
P
PK
100
W
Steady State Power - 1 Diode (Note 2)
P
D
300
mW
Thermal Resistance Junction to Ambient
Above 25
°
C, Derate
R
JA
370
2.7
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
-55 to +150
°
C
ESD Discharge
MIL STD 883C - Method 3015-6
IEC1000-4-2, Air Discharge
IEC1000-4-2, Contact Discharge
V
PP
16
16
9
kV
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
V
C
Max @ I
PP
Typ Capacitance
@ 0 V Bias
(Note 3)
Max
V
F
@ I
F
=
200 mA
Device
Min
Nom
Max
V
RWM
I
RWM
( A)
V
C
(V)
I
PP
(A)
(pF)
(V)
NZQA5V6XV5T1
56
5.32
5.6
5.88
3.0
1.0
10.5
10
90
1.3
NZQA6V2XV5T1
62
5.89
6.2
6.51
4.0
0.5
11.5
9.0
80
1.3
NZQA6V8XV5T1
68
6.46
6.8
7.14
4.3
0.1
12.5
8.0
70
1.3
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
°
C
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