參數(shù)資料
型號(hào)： NZQA5V6XV5T1G
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： Quad Array for ESD Protection
中文描述： 100 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝： LEAD FREE, PLASTIC, CASE 463B-01, 5 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 122K
代理商： NZQA5V6XV5T1G
NZQA5V6XV5T1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni
Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 s @ T
A
= 25
°
C) (Note 1)
P
PK
100
W
Steady State Power
1 Diode (Note 2)
P
D
300
mW
Thermal Resistance Junction to Ambient
Above 25
°
C, Derate
R
JA
370
2.7
°
C/W
mW/
°
C
Maximum Junction Temperature
T
Jmax
150
°
C
Operating Junction and Storage Temperature Range
T
J
T
stg
55 to +150
°
C
ESD Discharge
MIL STD 883C
Method 3015
6
IEC1000
4
2, Air Discharge
IEC1000
4
2, Contact Discharge
V
PP
16
16
9
kV
Lead Solder Temperature (10 seconds duration)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Device
Device
Marking
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
V
C
Max @ I
PP
Typ Capacitance
@ 0 V Bias
(Note 3)
Max
V
F
@ I
F
=
200 mA
Min
Nom
Max
V
RWM
I
RWM
( A)
V
C
(V)
I
PP
(A)
(pF)
(V)
NZQA5V6XV5T1G
56
5.32
5.6
5.88
3.0
1.0
10.5
10
90
1.3
NZQA6V2XV5T1G
62
5.89
6.2
6.51
4.0
0.5
11.5
9.0
80
1.3
NZQA6V8XV5T1G
68
6.46
6.8
7.14
4.3
0.1
12.5
8.0
70
1.3
1. Non
repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR
4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
°
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NZQA5V6XV5T3 功能描述:TVS二極管陣列 Quad TVS Array for RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NZQA5V6XV5T3G 功能描述:TVS二極管陣列 MI QUAD ARRAY TR SOT553 RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NZQA6V2XV5T1 功能描述:TVS ARRAY QUAD ESD 6.2V SOT553 RoHS:否 類別:過(guò)電壓，電流，溫度裝置 >> TVS - 二極管 系列:- 標(biāo)準(zhǔn)包裝:1,800 系列:TransZorb® 電壓 - 反向隔離（標(biāo)準(zhǔn)值）:28V 電壓 - 擊穿:31.1V 功率（瓦特）:400W 電極標(biāo)記:雙向 安裝類型:表面貼裝 封裝/外殼:DO-214AC，SMA 供應(yīng)商設(shè)備封裝:DO-214AC（SMA） 包裝:帶卷 (TR) 其它名稱:SMAJ28CA-E3/61-NDSMAJ28CA-E3/61GITR
NZQA6V2XV5T1G 功能描述:TVS二極管陣列 Quad TVS Array for ESD Protection RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C
NZQA6V8AXV5T 制造商:ON Semiconductor 功能描述:
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