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參數(shù)資料
| 型號： | NUP4102XV6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6−Pin Bi−Directional Quad TVS Array |
| 中文描述： | 75 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | NUP4102XV6T1G |
NUP4102XV6
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
=25
°
C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Working Voltage
(Note 2)
V
RWM
12
V
Breakdown Voltage
I
T
= 1 mA, (Note 3)
V
BR
13.6
17.8
V
Reverse Leakage Current
V
RWM
= 12 V
I
R
10
100
nA
Clamping Voltage
I
PP
= 3 A, (8x20 sec
Waveform)
V
C
25
V
Maximum Peak Pulse Current
8x20 sec waveform
I
PP
3.0
A
Capacitance
V
R
= 0 V, f=1 MHz
(Line to GND)
C
j
13
15
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
; Pulse Width 1 ms.
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise specified)
Figure 1. Pulse Waveform
t, TIME ( s)
30
15
10
5
0
P
P
25
20
90
80
70
60
50
40
30
20
10
0
100
110
WAVEFORM
PARAMETERS
t
r
= 8 s
t
d
= 20 s
t
d
= I
PP
/2
ct
T
A
, AMBIENT TEMPERATURE (
°
C)
150
125
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
100
110
%
P
Figure 2. Power Derating Curve
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
V
BR
, REVERSE VOLTAGE (V)
Figure 4. Junction Capacitance vs. Reverse
Voltage
12
14
16
18
20
22
24
0.1
1
10
C
,
Figure 3. Clamping Voltage vs. Peak Pulse
Current (10 sec Square Wave Pulse)
I
PP
, SURGE CURRENT (A)
t
P
= 10 sec
T
A
= 25
°
C
J
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NUP4103FC | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Four Channel ESD Array |
| NUP4103FCT1 | 功能描述:TVS二極管陣列 4 Channel ESD Array RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NUP4103FCT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 Channel ESD Array |
| NUP4103FCT1G | 功能描述:TVS二極管陣列 4 Channel ESD Array RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NUP4104X6/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-Line Transient Voltage Suppressor Array |
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