參數(shù)資料
型號(hào): NP88N055NLE
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 3/10頁
文件大?。?/td> 211K
代理商: NP88N055NLE
Data Sheet D13933EJ7V0DS
3
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55 V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
V
±
10
μ
A
Gate to Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 44 A
38
75
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 44 A
4.1
5.2
m
Ω
R
DS(on)2
V
GS
= 5.0 V, I
D
= 44 A
4.8
6.3
m
Ω
R
DS(on)3
V
GS
= 4.5 V, I
D
= 44 A
5.1
6.8
m
Ω
Input Capacitance
C
iss
9700
14600
pF
Output Capacitance
C
oss
1100
1700
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 25 V,
V
GS
= 0
V,
f = 1 MHz
490
890
pF
Turn-on Delay Time
t
d(on)
37
82
ns
Rise Time
t
r
22
56
ns
Turn-off Delay Time
t
d(off)
180
360
ns
Fall Time
t
f
V
DD
= 28
V, I
D
= 44
A,
V
GS
= 10
V,
R
G
= 1
Ω
35
88
ns
Total Gate Charge
Q
G1
V
DD
= 44
V, V
GS
= 10 V, I
D
= 88
A
160
240
nC
Q
G2
88
140
nC
Gate to Source Charge
Q
GS
27
nC
Gate to Drain Charge
Q
GD
V
DD
= 44
V,
V
GS
= 5.0 V,
I
D
= 88
A
48
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 88 A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
62
ns
Reverse Recovery Charge
Q
rr
I
F
= 88 A, V
GS
= 0
V,
di/dt = 100 A/
μ
s
120
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
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