參數(shù)資料
型號(hào): NP88N055MLE-S18-AY
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場(chǎng)效應(yīng)晶體管的開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 211K
代理商: NP88N055MLE-S18-AY
Data Sheet D13933EJ7V0DS
5
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
Ω
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
T
ch
- Channel Temperature -
°
C
V
G
0.5
V
DS
= V
GS
I
D
= 250
μ
A
1.0
1.5
2.0
2.5
50
0
50
100
150
0
I
D
- Drain Current - A
f
V
GS
- Gate to Source Voltage - V
0
0
5
10
0.01
0.1
1
10
10
100
5
15
20
Pulsed
0.1
0.01
1
10
I
D
= 44 A
I
D
- Drain Current - A
R
D
Ω
5
10
1
10
15
100
1000
Pulsed
0
V
GS
= 4.5 V
5.0 V
10 V
Pulsed
T
= 175
°
C
75
°
C
25
°
C
50
°
C
Figure6. FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
1
2
3
4
5
6
V
DS
= 10 V
1
0.1
0.01
10
100
T
A
=
25
°
C
25
°
C
75
°
C
150
°
C
175
°
C
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
00
2.0
3.0
4.0
200
500
400
300
1.0
Pulsed
V
GS
= 10 V
100
5.0 V
4.5 V
相關(guān)PDF資料
PDF描述
NP88N055NLE MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP88N055NLE-S18-AY MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NP88N055NHE 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP88N055NHE-S18 制造商:Renesas Electronics Corporation 功能描述:
NP88N055NHE-S18-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP88N055NLE 制造商:Renesas Electronics Corporation 功能描述:
NP88N055NLE-S18-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET