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參數(shù)資料
| 型號： | NP88N055KLE-E2-AY |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 211K |
| 代理商： | NP88N055KLE-E2-AY |
Data Sheet D13933EJ7V0DS
3
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55 V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
V
±
10
μ
A
Gate to Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 44 A
38
75
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 44 A
4.1
5.2
m
Ω
R
DS(on)2
V
GS
= 5.0 V, I
D
= 44 A
4.8
6.3
m
Ω
R
DS(on)3
V
GS
= 4.5 V, I
D
= 44 A
5.1
6.8
m
Ω
Input Capacitance
C
iss
9700
14600
pF
Output Capacitance
C
oss
1100
1700
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 25 V,
V
GS
= 0
V,
f = 1 MHz
490
890
pF
Turn-on Delay Time
t
d(on)
37
82
ns
Rise Time
t
r
22
56
ns
Turn-off Delay Time
t
d(off)
180
360
ns
Fall Time
t
f
V
DD
= 28
V, I
D
= 44
A,
V
GS
= 10
V,
R
G
= 1
Ω
35
88
ns
Total Gate Charge
Q
G1
V
DD
= 44
V, V
GS
= 10 V, I
D
= 88
A
160
240
nC
Q
G2
88
140
nC
Gate to Source Charge
Q
GS
27
nC
Gate to Drain Charge
Q
GD
V
DD
= 44
V,
V
GS
= 5.0 V,
I
D
= 88
A
48
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 88 A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
62
ns
Reverse Recovery Charge
Q
rr
I
F
= 88 A, V
GS
= 0
V,
di/dt = 100 A/
μ
s
120
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
≤
1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP88N055MLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MLE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NLE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NPH10S | Isolated 10W Single Output DC/DC Converters |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP88N055KUG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055KUG-E1-AY | 功能描述:MOSFET N-CH 55V 88A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP88N055MHE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MHE-S18-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MLE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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