- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361132 > NP88N055KLE-E1-AY (NEC Corp.) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | NP88N055KLE-E1-AY |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 211K |
| 代理商： | NP88N055KLE-E1-AY |
Data Sheet D13933EJ7V0DS
2
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
55
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Note1
Drain Current (pulse)
Note2
V
GSS
±
20
±
88
±
352
V
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
A
= 25
°
C)
Total Power Dissipation (T
C
= 25
°
C)
P
T
1.8
W
P
T
288
W
Channel Temperature
T
ch
175
°
C
°
C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to
+
175
I
AS
75/88
A
E
AS
562/232
mJ
Notes 1.
Calculated constant current according to MAX. allowable channel temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25
°
C, R
G
= 25
Ω
, V
GS
= 20
→
0 V (see
Figure
4.
)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
0.52
°
C/W
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP88N055KLE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MLE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NLE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP88N055KLE-E2-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055KUG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055KUG-E1-AY | 功能描述:MOSFET N-CH 55V 88A TO-263 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP88N055MHE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MHE-S18-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。