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參數(shù)資料
| 型號： | NNCD6.2MG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SC-74A, 5 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 159K |
| 代理商： | NNCD6.2MG |
Data Sheet D13910EJ2V0DS00
2
NNCD5.6MG to NNCD6.8MG
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C) (A-K1, A-K2, A-K3, A-K4)
Breakdown Voltage
V
BR
(V)
Note 1
Dynamic
Impedance
Z
Z
(
)
Note 2
Reverse
Leakage
I
R
(
μ
A)
Capacitance
C
t
(pF)
E.S.D Voltage
(kV)
Type No.
MIN.
MAX.
I
T
(mA)
MAX.
I
T
(mA)
MAX.
V
R
(V)
TYP.
TEST
CONDITION
MIN.
TEST
CONDITION
NNCD5.6MG
5.3
6.3
5
80
5
5
2.5
26
30
NNCD6.2MG
5.7
6.7
5
50
5
2
3.0
20
30
NNCD6.8MG
6.2
7.1
5
30
5
2
3.5
20
V
R
= 0 V
f = 1 MHz
30
C = 150 pF
R = 330
(IEC61000-4-2)
Note 1.
Tested with pulse (40 ms)
2.
Z
Z
is measured at I
T
give a small A.C. signal.
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Fig. 2 I
T
vs. V
BR
CHARACTERISTICS
30 x 30 x 1.6
P.C.B. (Glass Epoxy)
250
200
150
100
50
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature -
°
C
P
NNCD5.6MG
NNCD6.8MG
NNCD6.2MG
100 m
10 m
1 m
100
10
μ
5
6
7
8
V
BR
- Breakdown Voltage - V
I
T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NNCD68H | 制造商:NEC 制造商全稱:NEC 功能描述:LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE |
| NNCD68PG | 制造商:NEC 制造商全稱:NEC 功能描述:LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD |
| NNCD68PH | 制造商:NEC 制造商全稱:NEC 功能描述:LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD |
| NNCD68PL | 制造商:NEC 制造商全稱:NEC 功能描述:5-PIN SUPER SMALL MINI MOLD FLAT LEAD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUAD TYPE: COMMON ANODE |
| NNCD68RG | 制造商:NEC 制造商全稱:NEC 功能描述:LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD |
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