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參數(shù)資料
| 型號(hào)： | NES2427P-140 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封裝： | T-92, 5 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | NES2427P-140 |
Preliminary Data Sheet P15567EJ1V0DS
2
NES2427P-140
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25
°°°°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
19
V
Gate to Source Voltage
VGSO
7V
Gate to Drain Voltage
VGDO
22
V
Drain Current
ID
76
A
Gate Current
IG
440
mA
Total Power Dissipation
Ptot
Note
270
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C
Note TC = +25
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
12.0
V
Gain Compression
Gcomp
3.0
dB
Channel Temperature
Tch
+150
°C
Set Drain Current
IDset
VDS = 12.0 V, RF OFF
6.0
A
Gate Resistance
Rg
Note
5
12.5
Note Rg is the series resistance between the gate supply and the FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
IDSS
VDS = 2.5 V, VGS = 0 V
76.0
A
Pinch-off Voltage
Vp
VDS = 2.5 V, ID = 330 mA
4.0
2.6
V
Thermal Resistance
Rth
Channel to Case
0.4
0.55
°C/W
Output Power
Pout
f = 2.40 GHz, VDS = 12.0 V,
50.5
51.5
dBm
Drain Current
ID
Pin = 44.5 dBm, Rg = 5
,
23.0
A
Power Added Efficiency
ηadd
IDset = 6.0 A Total (RF OFF)
Note1
38
%
Linear Gain
GL
Note2
8.5
9.5
dB
Notes 1. IDset = 3.0 A each drain
2. Pin = 32 dBm
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