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參數(shù)資料
| 型號(hào)： | NE6500179A |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封裝： | 79A, 4 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | NE6500179A |
Preliminary Data Sheet PG10021EJ01V0DS
2
NE6500179A
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
7V
Drain Current
ID
2.5
A
Gate Forward Current
IGF
20
mA
Gate Reverse Current
IGR
20
mA
Total Power Dissipation
Ptot
7W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
65 to +150
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
6.0
V
Gain Compression
Gcomp
3.0
dB
Channel Temperature
Tch
+125
°C
ELECTRICAL CHARACTERISTICS
(TA = +25
°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
IDSS
VDS = 2.5 V, VGS = 0 V
1.8
A
Pinch-off Voltage
Vp
VDS = 2.5 V, ID = 10 mA
3.6
1.6
V
Gate to Drain Break Down Voltage
BVgd
Igd = 10 mA
15
V
Thermal Resistance
Rth
Channel to Case
15
18
°C/W
Gain 1 dB Compression Output Power
PO (1 dB)
f = 1.9 GHz, VDS = 6.0 V,
30.0
dBm
Drain Current
ID
Rg = 30
, IDset = 200 mA (RF OFF)
340
mA
Power Added Efficiency
ηadd
Note 2
50
%
Linear Gain
Note 1
GL
11.0
12.0
dB
Notes 1. Pin = 0 dBm
2. DC performance is 100 % testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE6500379 | 制造商:NEC 制造商全稱:NEC 功能描述:3W L, S-BAND POWER GaAs MESFET |
| NE6500379A | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6500379A-EVPW26 | 功能描述:射頻GaAs晶體管 For NE6500379A 2.6G RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6500379A-T1 | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6500379A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:NE6500379A-T1-A |
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