參數(shù)資料
型號: NE5234N/01,112
廠商: NXP Semiconductors
文件頁數(shù): 5/8頁
文件大小: 0K
描述: IC OPAMP MATCHED QUAD HP 14DIP
標(biāo)準(zhǔn)包裝: 25
放大器類型: 通用
電路數(shù): 4
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 0.8 V/µs
-3db帶寬: 2.5MHz
電流 - 輸入偏壓: 90nA
電壓 - 輸入偏移: 200µV
電流 - 電源: 2.8mA
電流 - 輸出 / 通道: 12mA
電壓 - 電源,單路/雙路(±): 2 V ~ 5.5 V,±1 V ~ 2.75 V
工作溫度: 0°C ~ 70°C
安裝類型: 通孔
封裝/外殼: 14-DIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 14-DIP
包裝: 管件
其它名稱: 935275256112
NE5234N/01
NE5234N/01-ND
Philips Semiconductors
Product data
NE/SA5234
Matched quad high-performance
low-voltage operational amplifier
2002 Feb 22
5
DC ELECTRICAL CHARACTERISTICS (Continued)
TEST CONDITIONS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
NE5234
SA5234
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
90
110
90
110
AVOL
Open-loop voltage gain
Over full temperature
range
90
dB
IPEAK = 0.1 mA
VEE+0.05
VCC–0.05
VEE+0.1
VCC–0.1
Output voltage swing
IPEAK = 10 mA
VEE+0.25
VCC–0.25 VEE+0.25
VCC–0.25
V
VOUT
Out ut voltage swing
IPEAK = 5 mA over full
temperature range
VEE+0.22
VCC–0.2
VEE+0.2
VCC–0.2
V
Output voltage swing for
RL = 2 k
VEE+0.2
VCC–0.2
VEE+0.2
VCC–0.2
V
gg
VCC = 2.75 V; VEE = –2.75 V
RL = 600
VEE+0.25
VCC–0.25 VEE+0.25
VCC–0.25
V
NOTE:
1. These parameters are measured for VEE < VCM < VEE+0.5 V and for VEE+1 V < VCM < VCC. By design these parameters are intermediate
for common mode ranges between the measured regions.
AC ELECTRICAL CHARACTERISTICS
Tamb = +25 °C; VCC = 2 V to 5.5 V; RL = 10 k; CL = 100 pF; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
NE5234
SA/SE5234
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
SR
Slew rate
Over full temperature
range
0.5
0.8
0.5
0.8
V/
s
BW
Unity gain bandwidth: –3 dB
Over full temperature
range
2
2.5
4.0
2
2.5
4.0
MHz
θM
Phase Margin
CL = 50 pF
55
deg
tS
1% settling time
AV = 1, 1 V step
1.4
s
VN
Input referred voltage noise
AV = 1; RS = 0 , at
1 kHz
25
nV/Hz1/2
THD
Total harmonic distortion
10 kHz, 1 VP-P, AV = 1
0.1
%
OUTPUT INVERSION PREVENTION
VIN
VOUT
VCC
+
5 V
CONVENTIONAL OP AMP
PHILIPS NE5234
t
VCC
VOUT
VIN
VGND
VCC
5 V
SL00569
47 k
47 k
Figure 2.
Output inversion prevention.
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