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參數(shù)資料
| 型號： | NE34018-64 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封裝： | PLASTIC, SUPERMINI-4 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 77K |
| 代理商： | NE34018-64 |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11618EJ4V0DS00 (4th edition)
Date Published September 2000 NS CP(K)
Printed in Japan
1996, 2000
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE34018
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
The mark
shows major revised points.
FEATURES
Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz
High associated gain: Ga = 16 dB TYP. @ f = 2 GHz
Gate width: Wg = 400
m
4-pin super minimold package
Tape & reel packaging only available
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE34018-T1
4-pin super minimold
8 mm wide embossed taping
Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
Qty 3 kpcs/reel
NE34018-T2
8 mm wide embossed taping
Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order:
NE34018).
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGSO
3.0
V
Gate to Drain Voltage
VGDO
3.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
150
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
65 to +125
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE34018-64-A | 功能描述:射頻GaAs晶體管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE34018-A | 功能描述:射頻GaAs晶體管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE34018-EVGA19 | 功能描述:射頻開發(fā)工具 For NE34018-A Gain at 1.9 GHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| NE34018-EVNF19 | 功能描述:射頻開發(fā)工具 For NE34018-A Noise Figure at 1.9 GHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| NE34018-T1 | 功能描述:MOSFET L-S Band Lo No Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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