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參數(shù)資料
| 型號(hào)： | NCS2563DGEVB |
| 廠商： | ON Semiconductor |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | BOARD EVALUATION NCS2563D |
| 設(shè)計(jì)資源： | NCS2563 Schematic NCS2563 BOM |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 主要目的： | 視頻，放大器，三路 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | NCS2563 |
| 主要屬性： | 增益 6dB，重構(gòu)濾波器 |
| 次要屬性： | AC 或 DC 耦合輸入和輸出 |
| 已供物品： | 板 |
| 其它名稱： | NCS2563DGEVBOS |
NCS2563
http://onsemi.com
3
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltages
VCC
0.35 v VCC v
5.5
Vdc
Input Voltage Range
VI
0.3 v VI v VCC
Vdc
Input Differential Voltage Range
VID
VI v VCC
Vdc
Output Current
IO
50
mA
Maximum Junction Temperature (Note 4)
TJ
150
°C
Operating Ambient Temperature
TA
40 to +85
°C
Storage Temperature Range
Tstg
60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
Thermal Resistance, JunctiontoAir
RqJA
112.7
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
4. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
Maximum Power Dissipation
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150
°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated” condition for an extended period can
result in device burnout. To ensure proper operation, it is
important to observe the derating curves.
Figure 2. Power Dissipation vs Temperature
0
200
400
600
800
1000
1200
1400
0 10 20304050607080 90100
TEMPERATURE (°C)
POWER
DISSIP
ATION
(mV)
1800
1600
40 302010
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