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參數(shù)資料
| 型號(hào)： | NAND512R4A2C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 512兆位，528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 13/51頁 |
| 文件大小： | 517K |
| 代理商： | NAND512R4A2C |
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Device operations
NAND512-A2C
20/51
Figure 7.
Pointer operations for programming
6.2
Read Memory Array
Each operation to read the memory area starts with a pointer operation as shown in the
Section 6.1: Pointer operations. Once the area (main or spare) has been selected using the
Read A, Read B or Read C commands four bus cycles (for 512Mb and 1Gb devices) or
three bus cycles (for 128Mb and 256Mb devices) are required to input the address (refer to
Table 6 and Table 7) of the data to be read.
The device defaults to Read A mode after power-up or a Reset operation.
When reading the spare area addresses:
●
A0 to A3 (x8 devices)
●
A0 to A2 (x16 devices)
are used to set the start address of the spare area while addresses:
●
A4 to A7 (x8 devices)
●
A3 to A7 (x16 devices)
are ignored.
Once the Read A or Read C commands have been issued they do not need to be reissued
for subsequent read operations as the pointer remains in the respective area. However, the
Read B command is effective for only one operation, once an operation has been executed
in Area B the pointer returns automatically to Area A and so another Read B command is
required to start another read operation in Area B.
Once a read command is issued two types of operations are available: Random Read and
Page Read.
6.2.1
Random Read
Each time the command is issued the first read is Random Read.
ai07591
I/O
Address
Inputs
Data Input
10h
80h
Areas A, B, C can be programmed depending on how much data is input. Subsequent 00h commands can be omitted.
AREA A
00h
Address
Inputs
Data Input
10h
80h
00h
I/O
Address
Inputs
Data Input
10h
80h
Areas B, C can be programmed depending on how much data is input. The 01h command must be re-issued before each program.
AREA B
01h
Address
Inputs
Data Input
10h
80h
01h
I/O
Address
Inputs
Data Input
10h
80h
Only Areas C can be programmed. Subsequent 50h commands can be omitted.
AREA C
50h
Address
Inputs
Data Input
10h
80h
50h
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| NAND512R4A2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512R4A2CZA6 | 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays |
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| NAND512W3A0AN6 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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