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參數(shù)資料
| 型號： | MX0912B251Y |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 雙極晶體管 |
| 英文描述： | NPN microwave power transistor |
| 封裝： | MX0912B251Y<SOT439A (CDFM2)|<<http://www.nxp.com/packages/SOT439A.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 77K |
| 代理商： | MX0912B251Y |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
THERMAL CHARACTERISTICS
T
j
= 125
°
C unless otherwise specified.
Notes
1.
2.
See “Mounting recommendations in the General part of handbook SC19a”
Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C measured in the test jig as shown in Fig.6 and working in class C broadband
mode in pulse; note 1.
Notes
1.
2.
Operating conditions and performance for other pulse formats can be made available on request.
V
CC
during pulse.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
R
th mb-h
Z
th j-h
thermal resistance from junction to mounting base CW
thermal resistance from mounting base to heatsink CW; note 1
thermal impedance from junction to heatsink
1.9
0.2
0.28
K/W
K/W
K/W
t
p
= 10
μ
s;
δ
= 10%
notes 1 and 2
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 65 V; I
E
= 0
V
CB
= 50 V; I
E
= 0
V
CE
= 60 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
100
10
100
1
mA
mA
mA
mA
I
CES
I
EBO
collector cut-off current
emitter cut-off current
MODE OF OPERATION
f
(GHz)
V
CC
(V)
(2)
P
L
(W)
G
po
(dB)
η
C
(%)
Z
i
/Z
L
(
)
Class C;
t
p
= 10
μ
s;
δ
= 10%
t
p
= 300
μ
s;
δ
= 10%;
see Fig.5
0.960 to 1.215
50
>235
typ. 275
typ. 280
>7
typ. 7.4
typ. 8
>42
typ. 47
typ. 48
see Figs 7 and 8
1.03 to 1.09
50
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| MX0912B251Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MX0912B251Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MX0912B351Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| MX0912B351Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MX0912B351Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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