
75
°°°°°C or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
8
300
200
100
0
Vds (V)
Ids
(mA)
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MwT-H15
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
18 Mils Long
2 Mils
MwT
FPH15
2 Mils
MwT-H15
OPTIONAL SINGLE BIAS WITH CAPS
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Bonding Configuration used to Obtain “S” Data
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
12 Mils Long
13 Mils Long
2 Mils
MwT
FPH15
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of Microstrip
Gold Blocks
10x10x5 for
Dual Bias, or
25 pF Caps
for Single
Bias (2 each)
MwT-H15
OPTIONAL BONDING
Gold Ridge
5x33x5 Mils
(1 each)
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
12 Mils Long
13 Mils Long
MwT
FPH15
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level
of Microstrip
25 pF Caps
10x33x5 Mils
(1 each)
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-H15
38 GHz High Power
AlGaAs/InGaAs PHEMT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
Absolute Maximum Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°°°°°C
200
+175
300
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MAXIMUM RATINGS AT Ta = 25
°°°°°C
IDSS
(mA)
BIN#
1
110-
120
BIN SELECTION
2
3
4
5
6
7
8
9
10
11
12
120-
130
130-
140
140-
150
150-
160
160-
170
170-
180
180-
190
190-
200
200-
210
210-
220
220-
230
MwT-H15
38 GHz High Power
AlGaAs/InGaAs PHEMT
BIN ACCURACY STATEMENT